EM6K1 transistor small switching (30v, 0.1a) EM6K1 ! ! ! ! features 1) two 2sk3019 transistors in a single emt package. 2) the mosfet elements are independent, eliminating interference. 3) mounting cost and area can be cut in half. 4) low on-resistance. 5) low voltage drive (2.5v) makes this device ideal for portable equipment. ! applications ! ! ! ! external dimensions (units : mm) each lead has same dimensions abbreviated symbol : k1 emt6 0.22 1.2 1.6 ( 1 ) ( 2 ) ( 5 ) ( 3 ) ( 6 ) ( 4 ) 0.13 0.5 0.5 0.5 1.0 1.6 interfacing, switching (30v, 100ma) ! ! ! ! structure silicon n-channel mosfet ! ! ! ! packaging specifications taping EM6K1 type t2r 8000 package basic ordering unit (pieces) code ! ! ! ! equivalent circuit (1) ? gate protection diode tr1 tr2 gate protection diode ? ? a protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. use the protection circuit when rated voltages are exceeded. (1)tr1 source (2)tr1 gate (3)tr2 drain (4)tr2 source (5)tr2 gate (6)tr1 drain (2) (3) (4) (5) (6) ! ! ! ! absolute maximum ratings (ta=25 c) parameter v v ma ma mw/total 120mw/1element c ma ma c v dss v gss i dr p d tch i d i drp i dp tstg symbol 30 20 100 400 100 400 150 150 ? 55~ + 150 limits unit ? 1 pw 10 s, duty cycle 1% ? 2 with each pin mounted on the recommended lands. drain ? source voltage gate ? source voltage drain current reverse drain current total power dissipation (tc=25 c) channel temperature storage temperature continuous pulsed continuous pulsed ? 1 ? 1 ? 2
EM6K1 transistor ! ! ! ! electrical characteristics (ta=25 c) parameter symbol i gss v (br)dss i dss v gs(th) r ds(on) r ds(on) c iss y fs c oss c rss min. ? 30 ? 0.8 ? ? 20 ? ? ? ? ? ? 5 13 ? 9 4 1 ? 1.0 1.5 8 ? 713 ? ? ? ? av gs = 20v, v ds = 0v i d = 10 a, v gs = 0v v ds = 30v, v gs = 0v v ds = 3v, i d = 10ma v ds = 3v, i d = 100 a i d = 10ma, v gs = 4v i d = 1ma, v gs = 2.5v v ds = 5v v gs = 0v f = 1mhz v a v ? ? pf ms pf pf t d(on) ? 15 ? i d = 10ma, v dd 5v ns t r ? 35 ? v gs = 5v ns t d(off) ? 80 ? r l = 500 ? ns t r ? 80 ? r gs = 10 ? ns typ. max. unit conditions gate ? source leakage gate threshold voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn ? on delay time turn ? off delay time rise time fall time drain ? source breakdown voltage static drain ? source on ? starte resistance zero gate voltage drain current ! ! ! ! electrical characteristic curves 012345 0 0.05 0.1 0.15 drain current : i d ( a) drain-source voltage : v ds ( v) 3v 3.5v 2.5v v gs =1.5v 4v 2v fig.1 typical output characteristics 04 0.1m 100m drain current : i d ( a) gate-source voltage : v gs ( v) 1 10m 3 2 1m 0.2m 0.5m 2m 5m 50m 20m 200m v ds =3v pulsed ta=125 c 75 c 25 c ? 25 c fig.2 typical transfer characteristics ? 50 0 0 1 1.5 2 gate threshold voltage : v gs (th) ( v) channel temperature : tch ( c ) 0.5 ? 25 25 50 75 100 125 150 v ds =3v i d =0.1ma fig.3 gate threshold voltage vs. channel temperature 0.001 1 2 50 static drain-source on-state resistance : r ds (on ) ( ? ) drain current : i d (a) 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 20 v gs =4v pulsed ta=125 c 75 c 25 c ? 25 c fig.4 static drain-source on-state resistance vs. drain current ( ) 0.001 1 2 50 static drain-source on-state resistance : r ds (on ) ( ? ) drain current : i d (a) 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 20 v gs =2.5v pulsed ta=125 c 75 c 25 c ? 25 c fig.5 static drain-source on-state resistance vs. drain current ( ? ) 0 5 10 15 20 0 5 10 15 gate-source voltage : v gs ( v) i d =0.1a static drain-source on-state resistance : r ds (on ) ( ? ) ta=25 c pulsed i d =0.05a fig.6 static drain-source on-state resistance vs. gate-source voltage
EM6K1 transistor ? 50 0 25 150 0 3 6 9 channel temperature : tch ( c) static drain-source on-state resistance : r ds (on ) ( ? ) ? 25 50 75 100 125 2 1 4 5 7 8 v gs =4v pulsed i d =100ma i d =50ma fig.7 static drain-source on-state resistance vs. channel temperature 0.0001 0.001 0.01 0.02 0.5 forward transfer admittance : ? yfs ? ( s) drain current : i d (a) 0.005 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.05 0.1 0.2 0.1 0.2 0.5 0.002 v ds =3v pulsed ta= ? 25 c 75 c 25 c 125 c fig.8 forward transfer admittance vs. drain current 200m reverce drain current : i dr (a) source-drain voltage : v sd (v ) 1.5 1 0.5 0 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m v gs =0v pulsed ta=125 c 75 c 25 c ? 25 c fig.9 reverse drain current vs. source-drain voltage ( ) 200m reverce drain current : i dr ( a) source-drain voltage : v sd ( v) 1.5 1 0.5 0 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m ta=25 c pulsed v gs =4v 0v fig.10 reverse drain current vs. source-drain voltage ( ? ) 0.1 1 2 50 capacitance : c (pf) drain-source voltage : v ds (v) 0.5 0.2 0.5 1 2 5 10 20 50 5 10 20 c iss c oss c rss ta =25 c f=1mh z v gs =0v pulsed fig.11 typical capacitance vs. drain-source voltage 0.1 10 20 500 swithing time : t (ns) drain current : i d (ma) 5 0.2 0.5 1 2 5 10 20 50 50 100 200 1000 2 100 ta =25 c v dd =5v v gs =5v r g =10 ? t d(off) t r t d(on) t f fig.12 switching characteristics ! ! ! ! switching characteristics measurement circuits fig.13 switching time test circuit v gs r g v ds d.u.t. i d r l v dd 90% 50% 10% 90% 10% 50% pulse width 10% v gs v ds 90% t f t off t d(off) t r t on t d(on) fig.14 switching time waveforms
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